PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 2

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN006-20K_1
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PSMN006-20K
Symbol
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
GS
tot
Symbol
S
S
S
G
D
D
D
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
SO8
Package
Name
Description
source
source
source
gate
drain
drain
drain
drain
Description
plastic small outline package; 8 leads; body width 3.9 mm
Conditions
T
T
T
T
T
T
j
sp
sp
sp
sp
sp
≥ 25 °C; T
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; t
Rev. 01 — 17 November 2009
j
p
p
≤ 150 °C
GS
≤ 10 µs; pulsed; see
≤ 10 µs; pulsed
Figure 2
= 4.5 V; see
N-channel TrenchMOS SiliconMAX ultra low level FET
Simplified outline
Figure 1
SOT96-1 (SO8)
8
1
Figure 3
and
3
5
4
PSMN006-20K
Graphic symbol
Min
-
-10
-
-
-
-
-55
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
20
10
32
60
8.3
150
150
7.5
30
D
Version
SOT96-1
S
Unit
V
V
A
A
W
°C
°C
A
A
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