FDB6035AL Fairchild Semiconductor, FDB6035AL Datasheet - Page 4

• Manufacturer Part Number: FDB6035AL
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDB6035AL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 48A
• Power Dissipation: 52W
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263AB
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics
1000
10
100
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.1
0.01
0.1
I
0.00001
D
1
SINGLE PULSE
= 48A
R
R
DS(ON)
V
JC
T
GS
A
= 2.9
= 25
= 10V
5
LIMIT
o
o
D = 0.5
C/W
C
V
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
0.05
Q
0.02
g
1
, GATE CHARGE (nC)
0.01
10
SINGLE PULSE
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
DC
0.0001
Figure 11. Transient Thermal Response Curve
100mS
15
10mS
V
DS
1mS
10
= 10V
100µs
15V
20
10µs
20V
0.001
25
100
t
1
, TIME (sec)
2000
1600
1200
5000
4000
3000
2000
1000
800
400
0.00001
0
0
0
Figure 8. Capacitance Characteristics.
C
Figure 10. Single Pulse Maximum
rss
0.01
5
0.0001
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
C
0.001
oss
t
1
, TIME (sec)
15
0.1
0.01
FDP6035AL/FDB6035AL Rev D(W)
Duty Cycle, D = t
T
P(pk
R
20
J
R
JC
- T
C
JC
SINGLE PULSE
R
(t) = r(t) * R
iss
A
= 2.9 °C/W
JC
t
T
1
= P * R
t
A
0.1
2
= 2.9°C/W
= 25°C
25
V
f = 1MHz
GS
JC
1
= 0 V
JC
(t)
/ t
2
1
30
1