FDB6035AL Fairchild Semiconductor, FDB6035AL Datasheet - Page 3

• Manufacturer Part Number: FDB6035AL
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDB6035AL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 48A
• Power Dissipation: 52W
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263AB
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics
180
150
120
90
75
60
45
30
15
90
60
30
1.8
1.6
1.4
1.2
0.8
0.6
0
0
Figure 3. On-Resistance Variation with
1.5
1
Figure 1. On-Region Characteristics.
-50
0
V
Figure 5. Transfer Characteristics.
DS
V
I
= 5V
D
GS
-25
= 24A
=10V
2
V
GS
1
V
= 10V
GS
0
V
T
DS
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
2.5
25
T
2
A
6.0V
= 125
50
3
5.0V
o
C
75
4.5V
3
25
3.5
100
o
4.0V
C
-55
o
o
C
C)
3.5V
125
4
4
3.0V
150
4.5
175
5
Figure 6. Body Diode Forward Voltage Variation
0.030
0.025
0.020
0.015
0.010
0.005
0.001
1000
1.8
1.6
1.4
1.2
0.8
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
0.1
1
10
1
2
0
0
Drain Current and Gate Voltage.
V
3.5V
GS
T
V
A
GS
= 3.5V
= 25
= 0V
Gate-to-Source Voltage.
0.2
o
C
20
V
4.0V
SD
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
4
, GATE TO SOURCE VOLTAGE (V)
T
0.4
A
I
4.5V
D
T
= 125
, DRAIN CURRENT (A)
A
= 125
40
o
C
0.6
o
C
5.0V
25
6
o
C
0.8
60
FDP6035AL/FDB6035AL Rev D(W)
6.0V
-55
o
C
1
8
80
10V
I
D
1.2
= 24A
100
1.4
10