FDB6035AL Fairchild Semiconductor, FDB6035AL Datasheet - Page 2

• Manufacturer Part Number: FDB6035AL
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDB6035AL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 48A
• Power Dissipation: 52W
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263AB
• Lead Free Status / Rohs Status: Compliant

Notes:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
E
I
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
R
f
AS
DSS
GSS
D(on)
d(on)
r
d(off)
S
rr
BV
V
FS
AS
GS(th)
SD
DS(on)
iss
oss
rss
G
g
gs
gd
rr
GS(th)
DSS
T
T
DSS
J
J
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
(Note 2)
(Note 1)
T
V
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
D
D
F
A
iF
DD
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 25°C unless otherwise noted
= 24 A,
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
/d
= 10 V, I
= 24 V,
=
= V
= 4.5 V,
= 10V,
= 15 V,
= 15 mV,
= 15 V,
= 15 V,
= 0 V,
= 10 V,
= 10 V,
= 15V,
= 10 V,
= 5 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
20 V, V
,
D
I
S
= 24 A, T
= 24 A
I
I
I
I
I
V
I
V
D
D
D
D
D
V
I
f = 1.0 MHz
I
R
D
D
D
GS
DS
GS
= 250 A
= 250 A
DS
GEN
= 48 A
= 24 A
= 20 A
= 48 A,
= 24 A
= 1 A,
= 0 V
= 0 V
= 10 V
= 0 V,
= 6
J
=125 C
(Note 1)
Min Typ
30
60
1
1250
10.2
13.0
0.92
330
155
1.9
7.9
1.3
4.3
5.5
23
–5
68
11
12
29
12
13
26
15
FDP6035AL/FDB6035AL Rev D(W)
Max
1.3
58
48
12
14
21
20
22
46
21
18
60
100
1
3
Units
mV/ C
mV/ C
m
mJ
nA
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
A
V
V
A
S
A
V
A