BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 7

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
160
140
120
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
18 V
2
2
10 V
8.0 V
4
min
typ
6
4
V
GS
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
= 4.5 V
V
5.5 V
5.0 V
DS
(V)
6.5 V
6.0 V
7.0 V
03nh45
03aa35
(V)
10
6
Rev. 03 — 14 June 2010
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
14
12
10
60
40
20
8
6
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
40
BUK7608-55A
60
15
© NXP B.V. 2010. All rights reserved.
V
80
GS
I
D
(V)
03nh44
03nh42
(A)
100
20
7 of 14