BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7608-55A

Manufacturer Part Number
BUK7608-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet

Specifications of BUK7608-55A

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Power Dissipation
254W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7608-55A
Manufacturer:
NXP
Quantity:
51 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive systems
BUK7608-55A
N-channel TrenchMOS standard level FET
Rev. 03 — 14 June 2010
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation T
drain-source on-state
resistance
Conditions
T
V
see
V
T
see
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
Figure
= 25 °C; see
Figure 12
Figure 12
= 10 V; T
= 10 V; I
= 10 V; I
1; see
j
D
D
≤ 175 °C
mb
= 25 A;
= 25 A;
Figure
= 25 °C;
Figure
Figure 2
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Figure 3
11;
11;
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
6.8
Max Unit
55
75
254
16
8
V
A
W
mΩ
mΩ

Related parts for BUK7608-55A

BUK7608-55A Summary of contents

Page 1

... BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 — 14 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET Min Typ ≤ sup = °C; j Graphic symbol ...

Page 3

... Figure 3 ≤ 10 µs; pulsed ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A Min Typ Max - - - [ 126 [2] Figure [ 504 - - 254 ...

Page 4

... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET 120 der 100 Normalized total power dissipation as a function of mounting base temperature 03nh48 = 10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7608-55A Product data sheet Conditions see Figure 4 mounted on printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET Min Typ - - - 50 03nh49 t p δ ...

Page 6

... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A Min Typ Max 4 500 - 0. 100 - 2 100 ...

Page 7

... V 5 (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET 14 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nh46 6 6 100 120 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 junction temperature ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nh40 = 25 ° ...

Page 10

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7608-55A separated from data sheet BUK7508_7608_55A v.2. BUK7508_7608_55A v.2 20020117 BUK7608-55A Product data sheet N-channel TrenchMOS standard level FET ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 BUK7608-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 June 2010 Document identifier: BUK7608-55A ...

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