BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 5

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7608-55A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
Conditions
see
mounted on printed-circuit
board ; minimum footprint
Rev. 03 — 14 June 2010
−4
Figure 4
10
−3
10
N-channel TrenchMOS standard level FET
−2
P
t
10
p
−1
T
t
p
BUK7608-55A
Min
-
-
δ =
(s)
03nh49
t
T
t
p
1
Typ
-
50
© NXP B.V. 2010. All rights reserved.
Max
0.59
-
Unit
K/W
K/W
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