BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 2

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK7608-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7608-55A
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
Simplified outline
SOT404 (D2PAK)
…continued
Conditions
I
R
T
V
V
see
D
1
j(init)
GS
DS
GS
= 75 A; V
mb
2
Figure 13
= 44 V; T
= 0 V; I
= 50 Ω; V
= 25 °C; unclamped
3
N-channel TrenchMOS standard level FET
D
sup
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
= 10 V;
Graphic symbol
BUK7608-55A
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
35
Version
SOT404
Max Unit
670
-
2 of 14
mJ
nC