BUK7608-55 NXP Semiconductors, BUK7608-55 Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7608-55

Manufacturer Part Number
BUK7608-55
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet
1.BUK7608-55.pdf (8 pages)

Specifications of BUK7608-55

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Continuous Drain Current
75A
Power Dissipation
187W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUK7608-55
Manufacturer:
PHILIPS
Quantity:
5 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUK7608-55
Manufacturer:
NXP SEMICONDUCTOR
Quantity:
30 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUK7608-55A
Manufacturer:
NXP
Quantity:
51 000
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
applications.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
April 1998
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
mb
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
technology
purpose
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
transistor
the
switching
device
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
Minimum footprint, FR4
board
mb
mb
mb
mb
GS
3
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
mb
V
GS
= 10 V
SYMBOL
TYP.
MIN.
MIN.
- 55
50
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
187
175
55
75
8
MAX.
MAX.
MAX.
240
187
175
0.8
55
55
16
75
65
2
BUK7608-55
-
d
s
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK7608-55 Summary of contents

Page 1

... DS(ON) resistance V GS PIN CONFIGURATION CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - Minimum footprint, FR4 board 1 Product specification BUK7608-55 MAX. UNIT 55 75 187 175 SYMBOL MIN. MAX. UNIT - 240 - 187 175 ˚C MIN. MAX. UNIT ...

Page 2

... 175˚C j CONDITIONS MHz Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK7608-55 MIN. TYP. MAX. UNIT 3 500 MIN. TYP. MAX. UNIT ...

Page 3

... CONDITIONS RDS(ON) = VDS/ID 120 140 160 180 = f & 1E+00 1E-01 1E-02 1E-03 120 140 160 180 Product specification BUK7608-55 MIN. TYP. MAX ˚C mb 1000 100 100 VDS / V Fig.3. Safe operating area ˚ f single pulse; parameter Zth / (K/W) 0.5 0.2 0.1 0. 0.02 ...

Page 4

... Fig.8. Typical transconductance BUK7508-55 2 1.5 10 0.5 80 100 120 = 25 ˚C . Fig.9. Normalised drain-source on-state resistance -100 Product specification BUK7608- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚ VGS(TO max. typ. min. - 100 Fig.10. Gate threshold voltage. ...

Page 5

... Ciss Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss BUK7508-55 VDS = 44V VGS 100 DS 5 Product specification BUK7608-55 Tj/C = 175 0 0 0.2 0.4 0.6 0.8 VSDS/V Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS WDSS ...

Page 6

... Philips Semiconductors TrenchMOS transistor Standard level FET RD VGS RG 0 Fig.17. Switching test circuit. April 1998 VDD + VDS - T.U.T. 6 Product specification BUK7608-55 Rev 1.000 ...

Page 7

... Epoxy meets UL94 V0 at 1/8". April 1998 10.3 max 11 max 15.4 0.85 max (x2) Fig.18. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.19. SOT404 : soldering pattern for surface mounting . 7 Product specification BUK7608-55 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.000 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 8 Product specification BUK7608-55 Rev 1.000 ...

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