BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 11

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Revision history
Table 7.
BUK7608-55A
Product data sheet
Document ID
BUK7608-55A v.3
Modifications:
BUK7508_7608_55A v.2 20020117
Revision history
Release date
20100614
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•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7608-55A separated from data sheet BUK7508_7608_55A v.2.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 03 — 14 June 2010
Change notice
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-
N-channel TrenchMOS standard level FET
BUK7608-55A
-
Supersedes
BUK7508_7608_55A v.2
© NXP B.V. 2010. All rights reserved.
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