BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
6. Characteristics
Table 6.
BUK7608-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
from upper edge of drain mounting
base to centre of die ; T
from drain lead 6 mm from package to
centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
D
D
D
D
D
D
S
S
j
j
j
DS
DS
DS
DS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C; see
= 25 °C
= 25 A; V
= 75 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Rev. 03 — 14 June 2010
Figure 10
Figure 10
Figure 10
Figure
Figure
Figure 15
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
11; see
11; see
GS
DS
S
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs;
GS
GS
L
DS
= 25 A; T
= 25 A; T
= 44 V; V
= 0 V; T
= V
= V
= V
= 1.2 Ω; V
GS
GS
= 20 V; T
= -20 V; T
Figure 13
= 25 V; f = 1 MHz;
Figure 14
j
j
= 25 °C
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 12
; T
; T
; T
j
j
= 25 °C;
j
j
j
j
j
GS
j
j
j
= 25 °C
= 175 °C;
= 25 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
GS
= 175 °C
= 25 °C
= 25 °C
j
j
= 25 °C
j
N-channel TrenchMOS standard level FET
= 0 V;
= -55 °C
= 25 °C
= 25 °C
= 5 V;
BUK7608-55A
Min
50
55
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.05
2
2
-
6.8
76
16
35
3264
719
390
24
94
100
80
2.5
4.5
7.5
0.85
65
170
© NXP B.V. 2010. All rights reserved.
863
533
-
Max
-
-
-
4
4.4
500
10
100
100
16
8
-
-
-
4352
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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