FDP5N60NZ Fairchild Semiconductor, FDP5N60NZ Datasheet - Page 8

• Manufacturer Part Number: FDP5N60NZ
• Description: MOSFET Power 600V N-Channel MOSFET, UniFET-II
• Manufacturer: Fairchild Semiconductor

Specifications of FDP5N60NZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 100 W
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 20 ns
• Gate Charge Qg: 10 nC
• Rise Time: 20 ns
• Lead Free Status / Rohs Status: Details

Package Dimensions
TO-220F
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
FDP10N60NZ / FDPF10N60NZ Rev. A
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