FDP5N60NZ Fairchild Semiconductor, FDP5N60NZ Datasheet - Page 3

• Manufacturer Part Number: FDP5N60NZ
• Description: MOSFET Power 600V N-Channel MOSFET, UniFET-II
• Manufacturer: Fairchild Semiconductor

Specifications of FDP5N60NZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 100 W
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 20 ns
• Gate Charge Qg: 10 nC
• Rise Time: 20 ns
• Lead Free Status / Rohs Status: Details

FDP5N60NZ / FDPF5N60NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1000
Figure 1. On-Region Characteristics
100
0.1
10
10
1
4
3
2
1
1
0.1
10
0
-1
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
GS
= 15.0V
10.0V
Drain Current and Gate Voltage
8.0V
7.0V
6.0V
5.5V
V
V
2
DS
DS
, Drain-Source Voltage[V]
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
(
C ds = shorted
4
1
1
*Notes:
1. 250
2. T
V
6
)
GS
C
V
*Note: T
= 10V
GS
= 25

*Note:
s Pulse Test
1. V
2. f = 1MHz
= 20V
C
C
C
o
oss
rss
C
iss
GS
8
10
C
= 25
= 0V
10
o
C
20
10
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
0.1
0.1
20
10
8
6
4
2
0
40
10
1
1
0
0.2
2
V
Variation vs. Source Current
and Temperature
0.4
SD
2
, Body Diode Forward Voltage [V]
Q
V
150
g
GS
4
, Total Gate Charge [nC]
o
, Gate-Source Voltage[V]
150
C
0.6
V
V
V
DS
DS
DS
o
4
C
= 120V
= 300V
= 480V
-55
25
0.8
6
o
o
C
C
*Notes:
25
6
1. V
2. 250
o
*Notes:
1. V
2. 250
*Note: I
C
1.0
DS
GS

= 20V
s Pulse Test

= 0V
s Pulse Test
8
D
8
= 4.5A
1.2
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10
1.4
10