FDP5N60NZ Fairchild Semiconductor, FDP5N60NZ Datasheet - Page 4
![MOSFET Power 600V N-Channel MOSFET, UniFET-II](/photos/16/7/160788/to-220_sml.jpg)
FDP5N60NZ
Manufacturer Part Number
FDP5N60NZ
Description
MOSFET Power 600V N-Channel MOSFET, UniFET-II
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDP5N60NZ.pdf
(9 pages)
Specifications of FDP5N60NZ
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.65 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
4.5 A
Power Dissipation
100 W
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
20 ns
Gate Charge Qg
10 nC
Rise Time
20 ns
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP5N60NZ
Manufacturer:
Fairchi/ON
Quantity:
17 382
FDP5N60NZ / FDPF5N60NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1.12
1.08
1.04
1.00
0.96
0.92
0.88
0.01
0.1
30
10
1
-80
0.1
-FDPF5N60NZ
vs. Temperature
-40
T
Operation in This Area
is Limited by R
V
J
1
, Junction Temperature
DS
, Drain-Source Voltage [V]
0.01
0
0.1
10
1
10
*Notes:
10
-5
1. T
2. T
3. Single Pulse
0.5
0.2
0.1
0.05
40
0.02
0.01
Single pulse
DS(on)
Figure 11. Transient
C
J
= 150
= 25
10
o
100
80
C
o
-4
C
*Notes:
1. V
2. I
[
o
C
D
GS
120
]
-FDPF5N60NZ
= 250
= 0V
1000 3000
10
100
30
1ms
10ms
DC
-3
Rectangular Pulse Duration [sec]
A
s
s
160
(Continued)
10
-2
Thermal
4
10
Figure 8. On-Resistance Variation
-1
Figure 10. Maximum Drain Current vs.
2.8
2.4
2.0
1.6
1.2
0.8
0.4
5
4
3
2
1
0
Response Curve
*Notes:
25
-80
1. Z
2. Duty Factor, D= t
3. T
P
1
JM
DM
JC
(t) = 3.75
- T
vs. Temperature
-40
Case Temperature
C
50
T
T
= P
J
C
, Junction Temperature
t
, Case Temperature [
1
DM
t
o
10
2
C/W Max.
* Z
0
1
/t
75
JC
2
(t)
40
10
2
100
80
o
*Notes:
C]
1. V
2. I
[
o
C
125
D
www.fairchildsemi.com
]
GS
120
= 2.25A
= 10V
150
160