NCN6000DTBR2 ON Semiconductor, NCN6000DTBR2 Datasheet - Page 9
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NCN6000DTBR2
Manufacturer Part Number
NCN6000DTBR2
Description
IC INTERFACE SMART CARD 20TSSOP
Manufacturer
ON Semiconductor
Datasheet
1.NCN6000DTBR2.pdf
(36 pages)
Specifications of NCN6000DTBR2
Applications
ATM Terminals, Gas Pumps, ISM
Interface
Microcontroller
Voltage - Supply
2.7 V ~ 6 V
Package / Case
20-TSSOP
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NCN6000DTBR2OSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCN6000DTBR2
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NCN6000DTBR2G
Manufacturer:
ON/安森美
Quantity:
20 000
5. Ceramic X7R, SMD types capacitors are mandatory to achieve the CRD_VCC specifications. When electrolytic capacitor is used, the
6. According to ISO7816−3, paragraph 4.3.2.
POWER SUPPLY SECTION
Power Supply
Standby Supply Current Conditions:
DC Operating Current (Figure 19)
@ Vbat = 6.0 V, CRD_VCC = 5.0 V
@ Vbat = 3.6 V, CRD_VCC = 5.0 V
Vbat Undervoltage Detection
Vbat Undervoltage Detection
Vbat Undervoltage Detection
Output Card Supply Voltage @ Icc = 55 mA
Output Card Supply Peak Current @ Vcc = 5.0 V
Output Current Limit Time Out
Output Over Current Limit
Output Dynamic Peak Current @ CRD_VCC = 3.0 V
Battery Start−Up Current
Output Card Supply Voltage Ripple @ Lout = 22 mH,
Output Card Supply Turn On Time @ Lout = 22 mF,
Output Card Supply Shut Off Time @ Cout1 = 10 mF,
DC−DC Converter Operating Frequency
Power Switch Drain/Source Resistor
Output Rectifier ON Resistor
PWR_ON = L, STATUS = H, CLOCK_IN = H,
CS = H. All other logic inputs and outputs are open:
PWR_ON = H, CLOCK_IN = 0, CS = H, all CRD pins
unloaded
or 5.0 V, Cout = 10 mF Ceramic XR7, Pulse Width
400 ns (Notes 5 and 6)
Cout 1 = 10 mF, Cout 2 = 100 nF, Vbat = 3.6 V
Iout = 55 mA
(Note 5)
Cout1 = 10 mF, Cout2 = 100 nF, Vbat = 2.7 V,
CRD_VCC = 5.0 V
Ceramic, Vbat = 2.7 V, CRD_VCC = 5.0 V,
Vcc
external filter must include a 100 nF, max 50 mW ESR capacitor in parallel, to reduce both the high frequency noise and ripple to a minimum.
Depending upon the PCB layout, it might be necessary is to use two 6.8 mF/10 V/ceramic/X7R//SMD1206 in parallel, yielding an improved
CRD_VCC ripple over the temperature range.
@ 2.70 V vVbat v6.0 V
@ Vbat
@ CRD_VCC = 5.0 V
@ CRD_VCC = 3.0 V
@ Vbat = 3.6 V, CRD_VCC = 5.0 V, Tamb < 65°C
Vbat = 3.0 V
Vbat = 5.0 V
@ CRD_VCC = 3.0 V, −25°C v TA v+ 85°C
@ CRD_VCC = 5.0 V, −25°CvTAv+ 85°C
CRD_VCC = 3.0 V
CRD_VCC = 5.0 V
CRD_VCC = 5.0 V
OFF
< 0.4 V
LL
< Vbat < 2.70 V
CRD_VCC = 5.0 V
CRD_VCC = 3.0V
Rating
High
Low
Hysteresis
(−25°C to +85°C ambient temperature, unless otherwise noted.)
http://onsemi.com
Vcc
Symbol
Vcc
Vbat
Vbat
Vbat
Ibat
Vcc
Ibat
R
R
V
V
V
Iccov
Vbat
Iccp
tdoff
Iccd
Icc
Fsw
Vcc
NCN6000
OND
C3H
C5H
C5H
ONS
TOFF
TON
st
sb
op
rip
LH
HY
LL
9
Pin
20
20
20
20
15
15
15
15
15
20
15
15
15
18
18
15
2.75
4.75
4.50
Min
100
2.7
2.1
2.0
55
55
65
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
140
300
600
3.0
7.0
2.0
4.0
1.9
2.8
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
3.25
5.25
100
250
6.0
8.0
5.0
2.7
2.6
2.0
2.2
3.4
15
50
50
−
−
−
−
−
−
−
−
−
−
−
Unit
kHz
mA
mV
mA
mA
mA
mA
mV
ms
ms
mA
ms
W
W
V
V
V
V