FDS6676S Fairchild Semiconductor, FDS6676S Datasheet - Page 4

• Manufacturer Part Number: FDS6676S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6676S

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 14.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition
• Other names: FDS6676S_NL

Typical Characteristics
0.01
100
0.1
10
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0.001
0.01
0.01
0
Figure 7. Gate Charge Characteristics.
0.1
0.0001
R
SINGLE PULSE
1
R
I
DS(ON)
D
JA
V
T
= 14.5A
GS
A
= 125
= 25
LIMIT
= 10V
o
o
D = 0.5
C
C/W
0.1
20
V
0.2
DS
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
Q
0.01
0.001
g
, GATE CHARGE (nC)
DC
SINGLE PULSE
40
1
10s
Figure 11. Transient Thermal Response Curve.
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
(continued)
V
10ms
DS
0.01
= 10V
1ms
10
60
20V
100us
15V
100
80
0.1
t
1
, TIME (sec)
6400
5600
4800
4000
3200
2400
1600
800
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
1
RSS
Figure 10. Single Pulse Maximum
0.01
5
C
OSS
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
C
t
1
ISS
, TIME (sec)
15
1
P(pk
Duty Cycle, D = t
T
R
R
J
- T
100
JC
20
10
JC
(t) = r(t) * R
t
C
1
= 125 °C/W
t
2
= P * R
SINGLE PULSE
R
JA
T
FDS6676S Rev F1 (W)
A
= 125°C/W
= 25°C
100
25
JC
V
f = 1MHz
1
GS
JC
(t)
/ t
= 0 V
2
1000
1000
30