FDS6676S Fairchild Semiconductor, FDS6676S Datasheet - Page 3

• Manufacturer Part Number: FDS6676S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6676S

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 14.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition
• Other names: FDS6676S_NL

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
50
40
30
20
10
50
40
30
20
10
1
Figure 3. On-Resistance Variation with
0
0
-55
Figure 1. On-Region Characteristics.
0
1
Figure 5. Transfer Characteristics.
V
GS
I
V
D
4.5V
GS
V
= 14.5A
= 10V
-35
DS
=10V
= 5V
-15
V
T
1.5
V
GS
J
DS
3.5V
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
3.0V
, DRAIN-SOURCE VOLTAGE (V)
0.5
5
T
A
= 125
25
o
2
C
25
45
2.5V
o
C
-55
1
65
o
C
o
2.5
C)
85
105
1.5
120
3
Figure 6. Body Diode Forward Voltage Variation
0.001
0.016
0.014
0.012
0.008
0.006
0.004
0.01
0.01
100
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
2
1
0
2
0
V
Drain Current and Gate Voltage.
V
T
GS
T
A
GS
A
= 125
= 2.5V
= 25
= 0V
Gate-to-Source Voltage.
o
o
C
V
C
10
SD
V
, BODY DIODE FORWARD VOLTAGE (V)
0.2
GS
4
, GATE TO SOURCE VOLTAGE (V)
25
3.0V
T
o
I
A
C
D
, DRAIN CURRENT (A)
= 125
-55
20
o
o
C
C
3.5V
0.4
6
30
4.5V
0.6
8
FDS6676S Rev F1 (W)
40
I
D
10V
= 7.3 A
10
0.8
50