PSMN1R1-30PL,127 NXP Semiconductors, PSMN1R1-30PL,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN1R1-30PL,127
• Description: MOSFET Power N-Ch 30V 1.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R1-30PL,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 243 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Input Capacitance (ciss) @ Vds: 14850pF @ 15V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065166127

NXP Semiconductors
PSMN1R1-30PL
Product data sheet
Fig 7.
Fig 9.
R
(m Ω )
(pF)
DSon
10
10
10
C
5
4
3
5
4
3
2
1
0
10
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Input and reverse transfer capacitances as a
0
-1
4
1
8
10
12
V
GS
All information provided in this document is subject to legal disclaimers.
V
C
003aaf764
003aaf766
C
GS
(V)
rss
iss
(V)
10
16
Rev. 02 — 19 April 2011
2
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Fig 8.
Fig 10. Sub-threshold drain current as a function of
10
10
10
10
10
10
(A)
(A)
I
I
300
250
200
150
100
D
D
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
3.5
4.5
10
2
min
1
PSMN1R1-30PL
4
6
typ
2
V
GS
© NXP B.V. 2011. All rights reserved.
V
8
(V) = 2.4
GS
003aab271
003aad011
V
max
3
DS
(V)
2.6
2.8
(V)
10
3
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