PSMN1R1-30PL,127 NXP Semiconductors, PSMN1R1-30PL,127 Datasheet

PSMN1R1-30PL,127

Manufacturer Part Number

PSMN1R1-30PL,127

Description

MOSFET Power N-Ch 30V 1.3 mOhms

Manufacturer

NXP Semiconductors

Series

-r

Datasheet

1.PSMN1R1-30PL127.pdf (15 pages)

Specifications of PSMN1R1-30PL,127

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.3 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

120 A

Power Dissipation

338 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220AB

Gate Charge Qg

243 nC

Minimum Operating Temperature

- 55 C

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.3 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

2.2V @ 1mA

Gate Charge (qg) @ Vgs

243nC @ 10V

Input Capacitance (ciss) @ Vds

14850pF @ 15V

Power - Max

338W

Mounting Type

Through Hole

Lead Free Status / Rohs Status

Details

Other names

934065166127

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

Table 1.

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

PSMN1R1-30PL

N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

Rev. 02 — 19 April 2011

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switiching

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive

drain-source avalanche

energy

Conditions

see

≥ 25 °C; T

= 25 °C; see

= 100 °C; see

= 120 A; V

Figure 1

Figure 15

= 25 °C; V

= 25 °C; see

= 15 V; see

= 10 V; I

= 4.5 V; I

= 10 V; T

= 50 Ω; unclamped

sup

≤ 175 °C

j(init)

= 25 A;

= 75 A;

Figure 12

Suitable for logic level gate drive

sources

Motor control

Server power supplies

Figure

≤ 30 V;

Figure 13

Figure 2

= 10 V;

= 25 °C;

14;

[1]

[2]

Min

-55

Product data sheet

Typ

1.1

1.5

118

Max Unit

120

338

175

1.3

1.8

1.9

°C

mΩ

Related parts for PSMN1R1-30PL,127

PSMN1R1-30PL,127 Summary of contents

Page 1

... PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Rev. 02 — 19 April 2011 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2011. All rights reserved ...

Page 3

... V sup GS 003a a f774 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 - ° ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN1R1-30PL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 D 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL =10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN1R1-30PL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min Typ Max - 0.22 0. 003aaf772 tp δ ...

Page 6

... Figure 14; see Figure see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min Typ Max 1.3 1.7 2.2 0 2 250 500 - 10 100 - 10 100 ...

Page 7

... A/µ 003aaf762 ( (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min Typ = 4 ° 213 - 199 - 115 - 0 123 003aaf763 = 175 ° ° 0.6 1 ...

Page 8

... C iss 10 C rss (V) GS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL 300 10 D 4.5 3.5 250 200 150 100 Output characteristics: drain current as a function of drain-source voltage; typical values ...

Page 9

... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003a a f767 120 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL 003aad012 2 2.6 GS 4.5 0 100 200 ...

Page 10

... G Fig 16. Input, output and reverse transfer capacitances ( 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL function of drain-source voltage; typical values 003aaf770 = 25 ° 0 (V) SD © NXP B.V. 2011. All rights reserved. ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R1-30PL v.2 20110419 • Modifications: Status changed from objective to product. • Various changes to content. PSMN1R1-30PL v.1 20110203 PSMN1R1-30PL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Data sheet status ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: PSMN1R1-30PL ...

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