PSMN1R1-30PL,127 NXP Semiconductors, PSMN1R1-30PL,127 Datasheet - Page 12

• Manufacturer Part Number: PSMN1R1-30PL,127
• Description: MOSFET Power N-Ch 30V 1.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R1-30PL,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 243 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Input Capacitance (ciss) @ Vds: 14850pF @ 15V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065166127

NXP Semiconductors
8. Revision history
Table 7.
PSMN1R1-30PL
Product data sheet
Document ID
PSMN1R1-30PL v.2
Modifications:
PSMN1R1-30PL v.1
Revision history
20110419
20110203
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 02 — 19 April 2011
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Change notice
-
-
PSMN1R1-30PL
Supersedes
PSMN1R1-30PL v.1
-
© NXP B.V. 2011. All rights reserved.
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