PSMN1R1-30PL NXP Semiconductors, PSMN1R1-30PL Datasheet
PSMN1R1-30PL
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PSMN1R1-30PL Summary of contents
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... PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Rev. 02 — 19 April 2011 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2011. All rights reserved ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN1R1-30PL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 D 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN1R1-30PL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min Typ Max - 0.22 0. 003aaf772 tp δ ...
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... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min Typ Max 1.3 1.7 2.2 0 2.5 - 0.02 ...
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... (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Min Typ = 4 ° 213 - 199 - 115 - 0 123 003aaf763 = 175 ° ...
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... C iss 10 C rss (V) GS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL 300 10 D 4.5 3.5 250 200 150 100 Output characteristics: drain current as a function of drain-source voltage; typical values ...
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... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003a a f767 120 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL 003aad012 2 2.6 GS 4.5 0 100 200 ...
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... Fig 16. Input, output and reverse transfer capacitances ( 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL function of drain-source voltage; typical values 003aaf770 = 25 ° 0 ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R1-30PL v.2 20110419 • Modifications: Status changed from objective to product. • Various changes to content. PSMN1R1-30PL v.1 20110203 PSMN1R1-30PL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R1-30PL Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: PSMN1R1-30PL ...