PSMN1R1-30PL,127 NXP Semiconductors, PSMN1R1-30PL,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R1-30PL,127
• Description: MOSFET Power N-Ch 30V 1.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R1-30PL,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 243 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Input Capacitance (ciss) @ Vds: 14850pF @ 15V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065166127

NXP Semiconductors
Table 6.
[1]
PSMN1R1-30PL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
Measured 3 mm from package.
(S)
g
300
240
180
120
fs
60
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
20
…continued
40
60
All information provided in this document is subject to legal disclaimers.
003aaf762
I
D
(A)
Conditions
V
R
I
see
I
V
S
S
DS
GS
G(ext)
80
= 25 A; V
= 25 A; dI
Rev. 02 — 19 April 2011
Figure 17
= 15 V; R
= 0 V; V
= 5 Ω; I
GS
S
DS
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
/dt = -100 A/µs;
L
D
= 0 V; T
Fig 6.
= 0.2 Ω; V
= 15 V
= 75 A; T
(A)
I
D
75
60
45
30
15
j
0
= 25 °C;
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
j
GS
= 25 °C
= 4.5 V;
0.6
T
j
PSMN1R1-30PL
= 175 ° C
1.2
Min
-
-
-
-
-
-
-
1.8
Typ
95
213
199
115
0.8
67
123
© NXP B.V. 2011. All rights reserved.
T
2.4
j
003aaf763
= 25 ° C
V
GS
-
Max
-
-
-
1.2
-
-
(V)
3
Unit
ns
ns
ns
ns
V
ns
nC
7 of 15