PSMN1R1-30PL,127 NXP Semiconductors, PSMN1R1-30PL,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN1R1-30PL,127
• Description: MOSFET Power N-Ch 30V 1.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R1-30PL,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 243 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Input Capacitance (ciss) @ Vds: 14850pF @ 15V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065166127

NXP Semiconductors
PSMN1R1-30PL
Product data sheet
Fig 3.
(A)
I
D
10
10
10
10
10
-1
4
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DS on
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
1
Rev. 02 — 19 April 2011
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
DC
10
PSMN1R1-30PL
V
DS
t
100 μ s
1 ms
10 ms
100 ms
(V)
p
=10 μ s
© NXP B.V. 2011. All rights reserved.
003a a f773
10
2
4 of 15