psmn1r1-30bl NXP Semiconductors, psmn1r1-30bl Datasheet

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psmn1r1-30bl

Manufacturer Part Number
psmn1r1-30bl
Description
Psmn1r1-30bl N-channel 30 V 1.1 M?? Logic Level Mosfet In D2pak
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN1R1-30BL
N-channel 30 V 1.1 mΩ logic level MOSFET in D2PAK
Rev. 1 — 3 February 2011
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
Conditions
T
T
see
T
V
T
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 25 °C; see
= 100 °C; see
Figure 1
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 25 A;
= 25 A;
Figure 12
Figure 13
Figure 2
= 10 V;
Suitable for logic level gate drive
sources
Motor control
Server power supplies
[1]
Objective data sheet
Min
-
-
-
-55
-
-
Typ
-
-
-
-
1
1.53 1.8
Max Unit
30
120
306
175
1.1
V
A
W
°C
mΩ
mΩ

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psmn1r1-30bl Summary of contents

Page 1

... PSMN1R1-30BL N-channel 30 V 1.1 mΩ logic level MOSFET in D2PAK Rev. 1 — 3 February 2011 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...

Page 2

... R GS Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL Min = Figure 14 °C; - j(init) ≤ sup Graphic symbol ...

Page 3

... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 -55 ...

Page 4

... I DSon Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board - All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL 003aaf773 =10 μ 100 μ 100 (V) DS Min Typ Max - ...

Page 5

... Ω °C G(ext 0.2 Ω Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL Min Typ Max Unit 1.3 1.7 2 ...

Page 6

... ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL Min Typ Max - 199 - - 115 - - 0.8 1 123 - © NXP B.V. 2011. All rights reserved. ...

Page 7

... D (A) 250 200 150 100 (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL 003aaf763 = 175 ° 0.6 1.2 1.8 2.4 003aad011 10 4.5 3.5 V (V) = 2.4 GS ...

Page 8

... GS Fig 10. Sub-threshold drain current as a function of 003a a c982 R (mΩ) 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL - min typ - gate-source voltage 10 2 ...

Page 9

... T j Fig 14. Gate charge waveform definitions 003aaf768 10 C (pF 200 300 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL GS(pl) V GS(th GS1 GS2 ...

Page 10

... Objective data sheet N-channel 30 V 1.1 mΩ logic level MOSFET in D2PAK ( 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL 003aaf770 = 25 ° 0 (V) SD © NXP B.V. 2011. All rights reserved ...

Page 11

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R1-30BL v.1 20110203 PSMN1R1-30BL Objective data sheet N-channel 30 V 1.1 mΩ logic level MOSFET in D2PAK Data sheet status Change notice Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 February 2011 PSMN1R1-30BL Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: PSMN1R1-30BL ...

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