PSMN1R5-40PS,127 NXP Semiconductors, PSMN1R5-40PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R5-40PS,127
• Description: MOSFET Power N-Ch 40V 1.6 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R5-40PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 133 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 9710pF @ 20V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065167127

NXP Semiconductors
PSMN1R5-40PS
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(m Ω )
(A)
I
10
10
10
10
10
10
D
DSon
−1
−2
−3
−4
−5
−6
8
6
4
2
0
gate-source voltage
of drain current; typical values
0
0
20
4.6
2
min
40
typ
4
4.8
60
max
V
V
GS
All information provided in this document is subject to legal disclaimers.
GS
003aaf326
I
D
(V) = 5
(V)
(A)
03aa35
5.2
10
20
80
6
Rev. 02 — 19 April 2011
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220.
Fig 12. Normalized drain-source on state resistance
Fig 14. Gate charge waveform definitions
a
2.5
1.5
0.5
2
1
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN1R5-40PS
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2011. All rights reserved.
003a a f322
003aaa508
T
j
(°C)
180
9 of 15