PSMN1R5-40PS,127 NXP Semiconductors, PSMN1R5-40PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN1R5-40PS,127
• Description: MOSFET Power N-Ch 40V 1.6 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R5-40PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 133 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 9710pF @ 20V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065167127

NXP Semiconductors
PSMN1R5-40PS
Product data sheet
Fig 7.
Fig 9.
18000
14000
10000
(pF)
R
(m Ω )
6000
2000
C
DSon
8
6
4
2
0
of gate-source voltage; typical values.
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Input and reverse transfer capacitances as a
4
1
8
12
10
C
C
V
iss
rss
16
GS
All information provided in this document is subject to legal disclaimers.
(V)
V
003aaf320
003aaf318
GS
(V)
10
20
Rev. 02 — 19 April 2011
2
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220.
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
80
60
40
20
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
0
20
6.0
0.25
5.2
0
PSMN1R5-40PS
5.0
0.5
60
max
min
typ
0.75
120
V
GS
© NXP B.V. 2011. All rights reserved.
003aaf319
V
003aad280
T
(V) = 4.8
DS
j
(°C)
(V)
4.7
4.6
4.5
180
1
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