FDMC8026S Fairchild Semiconductor, FDMC8026S Datasheet - Page 6

• Manufacturer Part Number: FDMC8026S
• Description: MOSFET Power 30V N-Channel PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8026S

• Configuration: Single (SyncFET)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.4 mOhms
• Forward Transconductance Gfs (max / Min): 106 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMC8026S Rev.C3
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMC8026S.
25
20
15
10
-5
5
0
Figure 14. FDMC8026S SyncFET body
diode reverse recovery characteristic
0
50
100
TIME (ns)
di/dt = 300 A/
(continued)
150
μ
s
200
250
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.000001
0.00001
0.0001
0.001
0.01
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
10
, REVERSE VOLTAGE (V)
15
T
T
T
J
J
J
= 125
= 100
= 25
o
o
o
20
C
C
C
www.fairchildsemi.com
25
30