FDMC8026S Fairchild Semiconductor, FDMC8026S Datasheet - Page 3

• Manufacturer Part Number: FDMC8026S
• Description: MOSFET Power 30V N-Channel PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8026S

• Configuration: Single (SyncFET)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.4 mOhms
• Forward Transconductance Gfs (max / Min): 106 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMC8026S Rev.C3
Typical Characteristics
100
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
Figure 3. Normalized On Resistance
0
0
Figure 1.
0.0
-75
1.0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
GS
= 19 A
vs Junction Temperature
= 5 V
= 10 V
1.5
V
T
V
V
-25
GS
J
DS
GS
On Region Characteristics
,
0.5
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
= 3.5 V
DRAIN TO SOURCE VOLTAGE (V)
T
J
2.0
= 125
0
V
V
V
V
GS
GS
GS
GS
= 10 V
= 6 V
= 4.5 V
o
= 4 V
25
C
μ
s
1.0
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
V
GS
J
= 25 °C unless otherwise noted
T
= 3 V
J
3.0
75
= -55
T
J
= 25
1.5
o
100 125 150
C )
o
C
o
3.5
C
μ
s
2.0
4.0
3
100
0.1
12
10
5
4
3
2
1
0
9
6
3
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
0.2
SD
= 0 V
V
GS
20
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
= 4 V
I
Source Voltage
D
4
T
Source to Drain Diode
,
,
J
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
= 125
D
0.4
= 19 A
V
V
GS
GS
40
o
C
= 4.5 V
= 3 V
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
T
T
J
J
J
V
= 125
60
= 25
= -55
GS
V
0.8
= 6 V
GS
o
o
C
o
= 3.5 V
C
C
T
8
J
V
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= 25
80
GS
1.0
= 10 V
o
C
μ
μ
s
s
100
1.2
10