FDMC8026S Fairchild Semiconductor, FDMC8026S Datasheet

MOSFET Power 30V N-Channel PowerTrench SyncFET

FDMC8026S

Manufacturer Part Number
FDMC8026S
Description
MOSFET Power 30V N-Channel PowerTrench SyncFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMC8026S

Configuration
Single (SyncFET)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.4 mOhms
Forward Transconductance Gfs (max / Min)
106 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
19 A
Power Dissipation
36 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MLP 3.3 x 3.3
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC8026S
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
©2011 Fairchild Semiconductor Corporation
FDMC8026S Rev.C3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC8026S
N-Channel PowerTrench
30 V, 21 A, 4.4 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
Symbol
Device Marking
STG
FDMC8026S
DS(on)
DS(on)
= 4.4 mΩ at V
= 5.2 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalance Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMC8026S
= 4.5 V, I
= 10 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
MLP 3.3x3.3
Device
Pin 1
D
D
= 19 A
= 17.5 A
T
®
A
= 25 °C unless otherwise noted
SyncFET
S
Parameter
S
DS(on)
S
MLP 3.3X3.3
G
Package
Bottom
and
1
TM
D
T
T
T
T
T
General Description
The FDMC8026S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
device has the added benefit of an efficient monolithic schottky
body diode.
Applications
A
A
C
C
C
DS(on)
D
= 25°C
= 25°C
= 25°C
= 25°C
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
= 25°C
D
D
while maintaining excellent switching performance.This
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 4)
(Note 3)
D
D
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
±20
100
2.4
3.4
30
21
76
19
66
36
53
www.fairchildsemi.com
3000 units
March 2011
Quantity
4
3
2
1
Units
°C/W
G
S
S
S
mJ
°C
W
V
V
A

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FDMC8026S Summary of contents

Page 1

... FDMC8026S FDMC8026S ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev.C3 ® TM SyncFET General Description The FDMC8026S has been designed to minimize losses power conversion application. Advancements in both silicon and = 17.5 A package technologies have been combined to offer the lowest D r while maintaining excellent switching performance.This ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting 0.3 mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 100 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev. °C unless otherwise noted μ s 1.5 2 100 125 150 100 - ...

Page 4

... THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev. °C unless otherwise noted J 5000 1000 100 100 100 Figure 10 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ Note RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 6

... 100 TIME (ns) Figure 14. FDMC8026S SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev.C3 (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. 0.01 0.001 0.0001 μ ...

Page 7

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev.C3 7 www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMC8026S Rev.C3 Power-SPM™ ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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