FDMC86102LZ Fairchild Semiconductor, FDMC86102LZ Datasheet - Page 5

• Manufacturer Part Number: FDMC86102LZ
• Description: MOSFET Power 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC86102LZ

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 7 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP-8
• Gate Charge Qg: 15.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

FDMC86102LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
0.0005
2000
1000
0.001
100
0.5
0.01
10
0.1
1
10
2
1
10
-4
-4
SINGLE PULSE
R
T
A
θ
DUTY CYCLE-DESCENDING ORDER
JA
= 25
= 125
D = 0.5
o
C
0.2
0.1
0.05
0.02
0.01
o
Figure 14.
C/W
10
10
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 25 °C unless otherwise noted
10
10
-2
-2
SINGLE PULSE
R
θ
JA
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
= 125
o
10
C/W
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
100
2
100
θJA
t
1
+ T
t
2
A
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1000
1000