FDMC86102LZ Fairchild Semiconductor, FDMC86102LZ Datasheet

MOSFET Power 100V N-Channel PowerTrench MOSFET

FDMC86102LZ

Manufacturer Part Number
FDMC86102LZ
Description
MOSFET Power 100V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMC86102LZ

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
24 mOhms
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
7 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MLP-8
Gate Charge Qg
15.3 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC86102LZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMC86102LZ
0
Company:
Part Number:
FDMC86102LZ
Quantity:
12 000
FDMC86102LZ Rev. C
©2011 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC86102LZ
N-Channel Power Trench
100 V, 22 A, 24 mΩ
Features
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
HBM ESD protection level > 6 KV typical (Note 4)
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC86102Z
DS(on)
DS(on)
= 24 mΩ at V
= 35 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
MLP 3.3x3.3
GS
GS
FDMC86102LZ
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
Pin 1
= 6.5 A
= 5.5 A
T
A
®
= 25 °C unless otherwise noted
S
S
Parameter
MOSFET
S
G
Bottom
Power 33
Package
D
1
T
T
T
T
T
D
General Description
This
Fairchild Semiconductor‘s advanced Power Trench
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
C
C
A
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
DC - DC Switching
D
N-Channel logic Level MOSFETs are produced using
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
(Note 3)
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
100
±20
2.3
29
41
53
22
30
84
7
3
www.fairchildsemi.com
3000 units
April 2011
Quantity
4
3
2
1
®
G
S
S
S
process
Units
°C/W
mJ
°C
W
V
V
A

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FDMC86102LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86102Z FDMC86102LZ ©2011 Fairchild Semiconductor Corporation FDMC86102LZ Rev. C ® MOSFET General Description = 6.5 A This N-Channel logic Level MOSFETs are produced using D Fairchild Semiconductor‘s advanced Power Trench = 5.5 A ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch mH The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDMC86102LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... Figure 3. Normalized On-Resistance vs Junction Temperature 30 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC86102LZ Rev °C unless otherwise noted μ 2 2.0 2.5 3.0 100 100 125 150 0 ...

Page 4

... J 1 0.001 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability - 125 GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDMC86102LZ Rev °C unless otherwise noted J 5000 1000 100 100 0.1 0.01 0.005 iss ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 14. ©2011 Fairchild Semiconductor Corporation FDMC86102LZ Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) ...

Page 6

... SIDE VIEW SEATING PLANE PIN #1 IDENT 1 0.55 (4X) 0.45 1.15 R0.15 0.30 8 0.65 BOTTOM VIEW ©2011 Fairchild Semiconductor Corporation FDMC86102LZ Rev 3.30 0. (0.20) 2.32 2.22 A. DOES NOT CONFORM TO JEDEC 0. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER 0.35 D. LAND PATTERN RECOMMENDATION IS 2 ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FPS™ Auto-SPM™ F-PFS™ ® AX-CAP™* FRFET ® BitSiC Global Power Resource Build it Now™ ...

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