FDMC86102LZ Fairchild Semiconductor, FDMC86102LZ Datasheet - Page 4

• Manufacturer Part Number: FDMC86102LZ
• Description: MOSFET Power 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC86102LZ

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 7 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP-8
• Gate Charge Qg: 15.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

FDMC86102LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
10
10
10
10
10
50
10
10
0.001
1
-1
-2
-3
-4
-5
-6
-7
-8
-9
8
6
4
2
0
Figure 7.
0
Figure 11. Gate Leakage Current vs
0
V
I
D
Figure 9.
DS
= 6.5 A
= 0 V
4
Gate to Source Voltage
V
0.01
Switching Capability
GS ,
Gate Charge Characteristics
t
AV
8
4
GATE TO SOURCE VOLTAGE (V)
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
g
, GATE CHARGE (nC)
12
T
J
V
= 125
DD
0.1
= 50 V
16
T
8
o
J
C
T
= 125
V
J
DD
T
= 25
20
J
= 25 V
T
V
o
= 25 °C unless otherwise noted
J
C
DD
o
= 25
C
T
1
= 75 V
J
= 100
24
12
o
C
o
C
28
10 20
32
16
4
0.005
0.01
5000
1000
0.1
30
25
20
15
10
50
10
100
5
0
Figure 10.
1
0.01
10
25
1
0.1
Limited by Package
f = 1 MHz
V
Figure 8.
GS
Current vs Case Temperature
Figure 12.
THIS AREA IS
LIMITED BY r
= 0 V
V
50
V
0.1
DS
Maximum Continuous Drain
DS
to Source Voltage
T
, DRAIN to SOURCE VOLTAGE (V)
C
, DRAIN TO SOURCE VOLTAGE (V)
Operating Area
SINGLE PULSE
T
R
T
, C
Capacitance vs Drain
J
A
θ
JA
= MAX RATED
= 25
ASE TEMPERATURE (
DS(on)
Forward Bias Safe
1
= 125
75
o
C
1
o
C/W
V
GS
100
= 4.5 V
10
10
R
θ
o
JC
C )
V
C
GS
C
125
C
= 3.0
oss
rss
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iss
= 10 V
100
o
1 ms
1 s
10 s
DC
100 us
10 ms
100 ms
C/W
150
500
100