NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 64

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NAND01GR3B2CZA6E

Manufacturer Part Number
NAND01GR3B2CZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND01GR3B2CZA6E

Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Program/erase Volt (typ)
1.7 to 1.95V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
128M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
ST
Quantity:
104
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Numonyx
Quantity:
70
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
NAND01GR3B2CZA6E
0
Company:
Part Number:
NAND01GR3B2CZA6E
Quantity:
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Package mechanical
Figure 40. VFBGA153 8 x 9 x 0.9 mm - 132+21 3R14, 0.50 mm pitch, package outline
64/67
and mechanical data
aaa
bbb
ddd
eee
Øb
SD
mD
mE
A1
A2
D1
eD
eE
FD
FE
SE
E1
fff
A
D
E
n
MIN
0.15
0.25
7.90
8.90
NOM
0.58
0.30
8.00
6.50
9.00
6.50
0.50
0.50
0.75
1.25
0.25
0.25
153
14
14
Control unit: mm
NAND01G-B2C
MAX
0.90
0.35
8.10
9.10
0.15
0.10
0.08
0.15
0.05

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