NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 26

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NAND01GR3B2CZA6E

Manufacturer Part Number
NAND01GR3B2CZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND01GR3B2CZA6E

Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Program/erase Volt (typ)
1.7 to 1.95V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
128M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant

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Device operations
Figure 10. Cache read operation
6.3
6.3.1
26/67
R/B
CL
AL
I/O
W
R
30h
Page program
The page program operation is the standard operation to program data to the memory array.
Within a given block, the pages must be programmed sequentially. Random page address
programming is not recommended.
The memory array is programmed by page, however partial page programming is allowed
where any number of bytes (1 to 2112) or words (1 to 1056) can be programmed.
The maximum number of consecutive partial page program operations allowed in the same
page is four. After exceeding this a Block Erase command must be issued before any further
program operations can take place in that page.
Sequential input
To input data sequentially the addresses must be sequential and remain in one block.
For sequential input each page program operation consists of five steps (see
1.
2.
3.
4.
5.
tBLBH1
one bus cycle is required to setup the Page Program (sequential input) command (see
Table
four bus cycles are then required to input the program address (refer to
Table
the data is then loaded into the data registers
one bus cycle is required to issue the Page Program Confirm command to start the
P/E/R controller. The P/E/R will only start if the data has been loaded in step 3
the P/E/R controller then programs the data into the array.
10)
7)
00h
C1
C2
Random
R1
R2
31h
tBLBHx
D0
...
Dn
Sequential
31h
NAND01G-B2C
Table 6
tBLBHx
Figure
ai14293
and
11):
D0

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