NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 33

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND01G-B2C
6.8
Read electronic signature
The device contains a manufacturer code and device code. To read these codes three steps
are required:
1.
2.
3.
Table 12.
Table 13.
NAND01GW3B2C
NAND01GW4B2C
NAND01GR3B2C
NAND01GR4B2C
Part number
One bus write cycle to issue the Read Electronic Signature command (90h)
One bus write cycle to input the address (00h)
Four bus read cycles to sequentially output the data (as shown in
signature).
I/O1-I/O0
I/O3-I/O2
I/O5-I/O4
I/O6
I/O7
I/O
Electronic signature
Electronic signature byte 3
Number of simultaneously
between multiple devices
Interleaved programming
Manufacturer
byte/word 1
Internal chip number
programmed pages
Cache program
code
20h
Definition
Cell type
Device code
byte/word 2
A1h
B1h
C1h
F1h
Value
0 0
0 1
1 0
1 1
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0 0
0
1
0
1
(see
byte/word 3
Table
00h
13)
Table 12: Electronic
2x multilevel cell
Device operations
Single level cell
Not supported
Not supported
Description
Supported
Supported
(see
Reserved
Reserved
Reserved
byte/word 4
1
2
4
1
2
3
4
Table
1Dh
5Dh
15h
55h
14)
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