NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 20

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

Command set
5
20/67
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in
Table 10.
1. The bus cycles are only shown for issuing the codes. The cycles required to input the
Read
Random Data Output
Cache Read
Exit Cache Read
Page Program
(sequential input default)
Random Data Input
Copy Back Program
Block Erase
Reset
Read Electronic Signature
Read Status Register
Read ONFI Parameter Page
addresses or input/output data are not shown.
Command
Commands
1
st
ECh
3Fh
FFh
00h
05h
00h
80h
85h
00h
60h
90h
70h
cycle
Table 10:
Bus write operations
2
nd
Commands.
D0h
E0h
30h
31h
10h
35h
cycle
–
–
–
–
–
–
3
rd
85h
cycle
–
–
–
–
–
–
–
–
–
–
–
(1)
4
th
10h
cycle
–
–
–
–
–
–
–
–
–
–
–
NAND01G-B2C
Commands
accepted
during
busy
Yes
Yes