WM8310GEB/V Wolfson Microelectronics, WM8310GEB/V Datasheet - Page 55

• Manufacturer Part Number: WM8310GEB/V
• Description: POWER MANAGEMENT SUBSYSTEM, 169BGA
• Manufacturer: Wolfson Microelectronics

Specifications of WM8310GEB/V

• Supply Voltage: 7V
• No. Of Step-down Dc - Dc Converters: 4
• No. Of Ldo Regulators: 11
• Digital Ic Case Style: BGA
• No. Of Pins: 169
• No. Of Regulated Outputs: 13
• Operating Temperature Range: -40°C To
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Pre-Production
14.4 OTP / DBE MEMORY CONTROL
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Figure 19 DBE Memory Connection
Note that the WM8310 does not support programming the external DBE memory.
External programming of DBE whilst physically connected to the WM8310 is possible by putting the
WM8310 in the OFF state. This is supported on the evaluation board, provided the voltage levels on
SCLK2 and SDA2 are less than or equal to the LDO12 VPMIC voltage. Note that the Write-Protect
(WP) pin on the DBE must be connected to GND (Vss) in this case.
The OTP and DBE Memory commands are initiated by writing to the OTP Control Register, as
defined in Section 14.4.6. The supported commands are described below.
READ DBE MEMORY - This command instructs the WM8310 to load data from the external DBE
into the WM8310 DORW memory area. Note that this command is performed automatically when the
WM8310 starts up in development mode.
READ OTP MEMORY - This command instructs the WM8310 to load data from the integrated OTP
memory area into the WM8310 DORW memory area. Note that this command is performed
automatically when the WM8310 starts up in normal (ie. non-development) mode.
WRITE OTP MEMORY - This command instructs the WM8310 to program the integrated OTP, by
writing a copy of the DORW memory area (Pages 0, 1, 2 and 3) to the OTP memory. This command
should be performed after the required settings have been configured in the DORW memory. The
required settings can be configured in the DORW either as a result of a DBE Read command, or else
through register writes in the PROGRAM power state. Note that the Write OTP command should only
be performed once on each OTP page; after the Write OTP command has been performed, the
contents of the affected page(s) cannot be erased or re-programmed.
VERIFY OTP MEMORY - This command instructs the WM8310 to compare the contents of the OTP
memory with the contents of the DORW memory. The Verify OTP command performs a check that
the OTP data is identical to the DORW contents, in order to confirm the success of the Write OTP
operation. For increased reliability, the WM8310 can apply a ‘Margin Read’ function when verifying
the OTP memory; it is recommended that the Margin Read option is used, as described in
Section 14.4.4.
FINALISE OTP PAGES - This command instructs the WM8310 to set the OTP_CUST_FINAL bit in
the OTP memory. The Finalise OTP command ensures that any subsequent OTP_WRITE
commands to Page 2 or Page 3 of the OTP will have no effect and that the OTP contents are
maintained securely.
PP, December 2009, Rev 3.0
WM8310
55