TSPC603RVA8LC Atmel, TSPC603RVA8LC Datasheet - Page 7

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TSPC603RVA8LC

Manufacturer Part Number
TSPC603RVA8LC
Description
IC MPU 32BIT 8MHZ 240CERQUAD
Manufacturer
Atmel
Datasheet

Specifications of TSPC603RVA8LC

Processor Type
PowerPC 603e 32-Bit RISC
Speed
200MHz
Voltage
2.5V
Mounting Type
Surface Mount
Package / Case
240-Cerquad
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Features
-
8. Thermal Characteristics
8.1
5410B–HIREL–09/05
CBGA 255 and CI-CGA 255 Packages
The data found in this section concerns 603R devices packaged in the 255-lead 21 mm
multi-layer ceramic (MLC) and ceramic BGA package. Data is included for use with a Thermal-
loy #2328B heat sink.
The internal thermal resistance for this package is negligible due to the exposed die design. A
thermal interface material is recommended at the package lid to heat sink interface to minimize
the thermal contact resistance.
Additionally, the CBGA package offers an excellent thermal connection to the card and power
planes. Heat generated at the chip is dissipated through the package, the heat sink (when used)
and the card. The parallel heat flow paths result in the lowest overall thermal resistance as well
as offer significantly better power dissipation capability if a heat sink is not used.
The thermal characteristics for the flip-chip CBGA and CI-CGA packages are as follows:
The junction temperature can be calculated from the junction to ambient thermal resistance, as
follow:
Junction temperature:
During operation, the die-junction temperatures (T
the value specified in
The thermal resistance of the thermal interface material (R
Assuming a T
device would be as follow:
For the Thermalloy heat sink #2328B, the heat sink-to-ambient thermal resistance (R
airflow velocity is shown in
Thermal resistance (junction-to-case) = R
θ
Thermal resistance (junction-to-ball) = R
θ
Thermal resistance (junction-to-bottom SCI) = R
θ
where:
jc
jb
js
T
= 0.095°C/Watt for the 2 packages.
= 3.7°C/Watt for the CI-CGA package.
= 3.5°C/Watt for the CBGA package.
j =
85°C + (0.095°C/Watt + 1°C/Watt + R
T
T
R
R
R
P is the power dissipated by the device
a
j =
a
jc
cs
sa
of 85°C and a consumption (P) of 3.6 Watts, the junction temperature of the
is the ambient temperature in the vicinity of the device
is the die junction to case thermal resistance of the device
is the case to heat sink thermal resistance of the interface material
is the heat sink to ambient thermal resistance
T
a
+ (R
”Recommended Operating Conditions” on page
jc
+ R
Figure
cs
+ R
8-1.
sa
) × P
jb
jc
or
or
sa
) × 3.5 Watts.
j
) should be maintained at a lower value than
js
or
cs
) is typically about 1°C/Watt.
6.
TSPC603R
sa
) versus
7

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