MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 62

• Manufacturer Part Number: MT48H4M16LFB4-75
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 47:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
COMMAND
A0-A9, A11
BA0, BA1
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
Alternating Bank Write Accesses
t CKH
t CMH
t AH
t AH
t AH
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
Notes:
t CK
T1
NOP
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
ENABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 2
BANK 0
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
ACTIVE
BANK 1
IN
T4
ROW
ROW
m + 2
t DH
62
t RCD - BANK 1
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR - BANK 0
ENABLE AUTO PRECHARGE
64Mb: 4 Meg x 16 Mobile SDRAM
t DS
COLUMN b 2
BANK 1
WRITE
T6
D
IN
t DH
b
t DS
t RP - BANK 0
D
NOP
T7
IN
b + 1
t DH
©2006 Micron Technology, Inc. All rights reserved.
t DS
D
IN
NOP
T8
b + 2
t DH
t DS
D
BANK 0
ACTIVE
T9
IN
ROW
ROW
b + 3
t
t
RCD - BANK 0
WR - BANK 1
DON’T CARE
t DH