MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 59

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MT48H4M16LFB4-75

Manufacturer Part Number
MT48H4M16LFB4-75
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-75

Organization
4Mx16
Density
64Mb
Address Bus
14b
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H4M16LFB4-75 IT:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75 IT:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75:H
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Micron Technology Inc
Quantity:
10 000
Part Number:
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Manufacturer:
MICRON
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Part Number:
MT48H4M16LFB4-75:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75IT:H
Manufacturer:
ISSI
Quantity:
171
Figure 44:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
COMMAND
A0-A9, A11
BA0, BA1
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
WRITE – with Auto Precharge
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
ENABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 2
WRITE
T2
D
BANK
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
59
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
64Mb: 4 Meg x 16 Mobile SDRAM
NOP
T6
T7
NOP
©2006 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
DON’T CARE
ACTIVE
ROW
ROW
BANK
T9

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