MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 58

• Manufacturer Part Number: MT48H4M16LFB4-75
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 43:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
COMMAND
A0-A9, A11
BA0, BA1
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
WRITE – Without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, the burst length = 4, and the WRITE burst is followed by a “manual” PRE-
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
DISABLE AUTO PRECHARGE
t CMS
CHARGE.
quency.
t CL
t DS
COLUMN m 3
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
58
IN
m + 3> and the PRECHARGE command, regardless of fre-
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64Mb: 4 Meg x 16 Mobile SDRAM
t WR
NOP
T6
2
SINGLE BANK
PRECHARGE
ALL BANKS
BANK
T7
©2006 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
ACTIVE
ROW
ROW
BANK
DON’T CARE
T9