MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 41

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MT48H4M16LFB4-75

Manufacturer Part Number
MT48H4M16LFB4-75
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-75

Organization
4Mx16
Density
64Mb
Address Bus
14b
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H4M16LFB4-75 IT:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75 IT:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75:H
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT48H4M16LFB4-75:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75IT:H
Manufacturer:
ISSI
Quantity:
171
Table 20:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
AC Characteristics
Parameter
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, and 11; notes appear on page 45
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
t
t
WR (m)
WR (a)
AC (3)
AC (2)
t
CK (3)
CK (2)
HZ (3)
HZ (2)
t
t
t
t
t
t
t
t
t
CMH
t
t
CMS
t
t
tAS
t
CKH
OH
RCD
RRD
t
RAS
t
t
CKS
t
REF
RFC
t
XSR
AH
DH
OH
CH
DS
RC
RP
t
CL
LZ
T
N
41
1 CLK +
7.5ns
Min
67.5
2.5
7.5
2.5
2.5
2.5
2.5
1.8
0.5
10
45
20
75
20
15
15
75
1
3
3
1
1
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-75
120,000
64Mb: 4 Meg x 16 Mobile SDRAM
Max
100
100
1.2
64
6
7
6
7
1 CLK +
Min
7ns
2.5
2.5
2.5
2.5
2.5
1.8
0.5
12
48
72
24
80
24
16
15
80
1
3
3
8
1
1
1
1
-8
120,000
©2006 Micron Technology, Inc. All rights reserved.
Max
100
100
1.2
64
6
8
7
8
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
23
23
10
10
27
24
20
7

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