PNX1311EH/G NXP Semiconductors, PNX1311EH/G Datasheet - Page 191
PNX1311EH/G
Manufacturer Part Number
PNX1311EH/G
Description
Manufacturer
NXP Semiconductors
Datasheet
1.PNX1311EHG.pdf
(548 pages)
Specifications of PNX1311EH/G
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reliable operation of an 166- MHz (T
system.
Table 12-17. Critical 166-MHz SDRAM parameters
For a 183 MHz operation, SDRAM devices must meet
the critical specifications listed in
reliable operation of an 183- MHz (T
ory system.
Table 12-18. Critical 183-MHz SDRAM parameters
These values leave virtually no margin for the critical tim-
ing parameters in a high-speed system and assume a to-
tal worst case delay from 0.6 ns to 0.4 ns (From 143 MHz
to 183 MHz operating frequency the trace layout must be
improved to reduce trace delay as well as skew) and a
T
The maximum operating frequency is usually computed
with the following equation:
Where T
MM_CLK1, and T
in
trace delay and trace skew.
Max. output delay
Min. output hold time
Max. input setup time
Max. input hold time
Max. output delay
Min. output hold time
Max. input setup time
Max. input hold time
SU
T
Section 1.9.7.10 on page
cycle
for PNX1300 of 0 ns.
≥
CS
Timing Parameter
Timing Parameter
t
AC
is the skew between MM_CLK0 and
+
T
SU
board
the input data setup time as defined
+
t
t
t
t
t
t
t
t
AC
OH
IS
IH
AC
OH
IS
IH
T
CS
1-19, and T
+
T
Table 12-18
SU
cycle
cycle
.
= 6 ns) memory
= 5.4 ns) mem-
board
5.5 ns
2.0 ns
1.5 ns
1.0 ns
5.0 ns
2.0 ns
1.5 ns
1.0 ns
Value
Value
to ensure
includes
12.16.1 Main AC Parameter requirements
The PNX1300 SDRAM interface was designed to sup-
port a wide range of SDRAM vendors.
scribes some of the minimum SDRAM AC requirements
for PNX1300 to operate correctly. The symbols or names
are not really standardized and may differ from one ven-
dor to another one. The table is not meant to be exhaus-
tive and shows only the main parameters. Parameters
are expressed in clock cycles rather than ns.
Table 12-19. Minimum AC Parameters
12.17 EXAMPLE BLOCK DIAGRAMS
The following figures illustrate some of the memory con-
figurations that can be built with PNX1300. For all them
the signals used as bank addresses, are interchange-
able (i.e. it does not matter which of the two signals is
connected to Bank 1 or Bank 0 of the SDRAM device).
12.17.1 Block Diagrams for a 32-bit interface
The following sections present examples of possible
connections with 16-, 64-, 128- and 256 Mbit SDRAMs.
MM_CONFIG.BW must be set to ‘0’ (refer to bw,
Section
12.17.1.1 16-Mbit Devices or Less
These devices allow small memory configurations to be
built. They are described in more details in the TM-1000
and TM-1100 Databooks.
PRELIMINARY SPECIFICATION
ACTIVE command period
ACTIVE to PRECHARGE command
PRECHARGE command period
ACTIVE Bank A to ACTIVE bank B
ACTIVE to READ or WRITE command
WRITE recovery time
12.6.1).
Description
SDRAM Memory System
Table
t
t
t
t
t
t
Symbol Clocks
RC
RAS
RP
RRD
RCD
WR
12-19, de-
10
12-9
7
3
3
3
2
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