MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 67

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Table 25:
Table 26:
Table 27:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
Description
Instruction Field
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current
Output leakage current
Output low voltage
Output low voltage
Output high voltage
Output high voltage
Revision number (31:28)
Device ID (27:12)
Micron JEDEC ID code (11:1)
ID register presence indicator (0)
TAP DC Electrical Characteristics and Operating Conditions
+0°C ≤ T
Identification Register Definitions
Scan Register Sizes
Notes:
C
≤ +95°C; +1.7V ≤ V
1. All voltages referenced to V
2. Overshoot = V
Register Name
Instruction
Bypass
ID
Boundary scan
ing normal operation, V
Output disabled,
0V ≤ V
00jkidef10100111 def = 000 for 288Mb, 001 for 576Mb
0V ≤ V
|I
I
|I
OHc
OLc
Condition
I
00000101100
OHt
All Devices
OLt
DD
| = 100µA
= 100µA
| = 2mA
IN
= 2mA
abcd
IN
≤ +1.9V, unless otherwise noted
IH(AC)
1
≤ V
≤ V
288Mb: x18 2.5V V
DDQ
DD
≤ V
DD
DDQ
+ 0.7V for t ≤
ab = 00 for die Rev. A, 01 for die Rev. B
cd = 00 for x9, 01 for x18
i = 0 for common I/O, 1 for separate I/O
jk = 01 for RLDRAM II
Allows unique identification of RLDRAM vendor
Indicates the presence of an ID register
SS
Symbol
must not exceed V
70
V
V
(GND).
V
V
V
V
I
OH1
OH2
I
OL1
OL2
LO
LI
IH
IL
IEEE 1149.1 Serial Boundary Scan (JTAG)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CK/2; undershoot = V
V
V
V
V
EXT
REF
DDQ
DDQ
SSQ
Min
–5.0
–5.0
, 1.8V V
+ 0.15
DD
- 0.3
- 0.2
- 0.4
.
Description
V
V
DD
REF
DD
Max
5.0
5.0
0.2
0.4
, HSTL, SIO, RLDRAM II
- 0.15
+ 0.3
IL(AC)
Bit Size
©2003Micron Technology, Inc. All rights reserved.
113
≥ –0.5V for t ≤
32
8
1
Units
µA
µA
V
V
V
V
V
V
t
CK/2; dur-
Notes
1, 2
1, 2
1
1
1
1