MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 56

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 36:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
ADDRESS
BANK
DK#
CK#
DM
DK
CK
D
WRITE
Bank a
Consecutive WRITE Bursts with Multiplexed Addressing
T0
Ax
Notes:
NOP
T1
Ay
t
RC = 4
1. Data from the second WRITE command to bank a will appear on subsequent clock cycles
2. DI a = data-in for bank a; DI b = data-in for bank b.
3. Three subsequent elements of the burst are applied following DI for each bank.
4. Each WRITE command may be to any bank; if the second WRITE is to the same bank,
that are not shown.
must be met.
Bank b
WRITE
T2
Ax
WL = 6
288Mb: x18 2.5V V
T3
NOP
Ay
Bank a 1
WRITE
T4
Ax
59
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
NOP
Ay
EXT
, 1.8V V
T6
DI
NOP
a
T6n
DD
TRANSITIONING DATA
, HSTL, SIO, RLDRAM II
T7
NOP
©2003Micron Technology, Inc. All rights reserved.
T7n
T8
DI
NOP
b
Operations
T8n
DON’T CARE
T9
NOP
t
RC