MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 57

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 37:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
ADDRESS
BANK
QVLD
QK#
DK#
CK#
DM
DK
CK
D
Q
WRITE-to-READ with Multiplexed Addressing
WRITE
Bank a
T0
Ax
Notes:
1. DI a = data-in for bank a.
2. DO b = data-out from bank b.
3. One subsequent element of each burst follows DI a and DO b.
4. BL = 2.
5. Nominal conditions are assumed for specifications not defined.
6. Bank address can be to any bank, but the subsequent READ can only be to the same bank if
NOP
Ay
T1
t
RC has been met.
WL = 6
READ
Bank b
T2
Ax
288Mb: x18 2.5V V
T3
NOP
Ay
60
RL = 5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
NOP
EXT
, 1.8V V
T5
NOP
TRANSITIONING DATA
DD
, HSTL, SIO, RLDRAM II
©2003Micron Technology, Inc. All rights reserved.
T6
NOP
DI
a
T6n
Operations
T7
NOP
DON’T CARE
DO
b
T7n