MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 42

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 20:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
ADDRESS
QVLD
QK#
DK#
CK#
DM
DK
CK
Q
D
WRITE-to-READ
Bank a,
WRITE
Add n
T0
Notes:
1. DI an = data-in for bank a and address n.
2. DO bn = data-out from bank b and address n.
3. Three subsequent elements of each burst follow DI an and DO bn.
4. BL = 4.
5. Nominal conditions are assumed for specifications not defined.
Bank b,
READ
Add n
T1
NOP
T2
WL = 5
288Mb: x18 2.5V V
RL = 4
NOP
T3
45
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
NOP
EXT
, 1.8V V
T5
NOP
an
DI
TRANSITIONING DATA
DO
bn
DD
T5n
, HSTL, SIO, RLDRAM II
©2003Micron Technology, Inc. All rights reserved.
T6
NOP
T6n
Operations
DON’T CARE
T7
NOP