MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 58

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 38:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
ADDRESS
BANK
QVLD
QK#
CK#
QK
CK
Consecutive READ Burst with Multiplexed Addressing
Q
Notes:
Bank a
READ
T0
Ax
1. DO a = data-out from bank a.
2. Nominal conditions are assumed for specifications not defined.
3. BL = 4.
4. Three subsequent elements of the burst appear following DO a.
5. Example applies only when READ commands are issued to the same device.
6. Bank address can be to any bank, but the subsequent READ can only be to the same bank if
7. Data from the READ commands to banks b through bank d will appear on subsequent clock
t
cycles (not shown).
RC has been met.
NOP
Ay
T1
RL = 5
288Mb: x18 2.5V V
Bank b
READ
T2
Ax
61
T3
NOP
Ay
Micron Technology, Inc., reserves the right to change products or specifications without notice.
EXT
Bank c
READ
T4
, 1.8V V
Ax
TRANSITIONING DATA
DD
T5
NOP
Ay
, HSTL, SIO, RLDRAM II
DO
©2003Micron Technology, Inc. All rights reserved.
a
T5n
Bank d
DON’T CARE
T6
READ
Ax
Operations
T6n