MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 50

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MT49H16M18CBM-25

Manufacturer Part Number
MT49H16M18CBM-25
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet

Specifications of MT49H16M18CBM-25

Organization
16Mx18
Density
288Mb
Address Bus
23b
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
uBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
779mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT49H16M18CBM-25
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT49H16M18CBM-25 IT:B
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT49H16M18CBM-25:B
Manufacturer:
MICRON
Quantity:
20 000
Figure 30:
Figure 31:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
D and DM ODT
ADDRESS
COMMAND
Q ODT
ADDRESS
QVLD
Q ODT
QVLD
QK#
CK#
QK#
QK
DK#
CK#
DM
QK
CK
DK
Q
CK
D
Q
Bank a,
Add n
READ
T0
READ-NOP-READ with ODT
READ-to-WRITE with ODT
Bank a,
READ
Col n
T0
Notes:
Notes:
Bank b,
WRITE
Add n
T1
1. DO an (or bn) = data-out from bank a (or bank b) and address n.
2. BL = 2.
3. One subsequent element of the burst appears after DO an and DO bn.
4. Nominal conditions are assumed for specifications not defined.
1. DO an = data-out from bank a and address n; DI bn = data-in for bank b and address n.
2. BL = 4.
3. Three subsequent elements of each burst appear after each DO an and DI bn.
4. Nominal conditions are assumed for specifications not defined.
NOP
T1
RL = 4
Q ODT on
t
RC = RL = 4
Q ODT on
NOP
T2
Bank b,
WL = RL + 1 = 5
READ
Col n
T2
288Mb: x18 2.5V V
NOP
T3
T3
NOP
53
Bank a,
READ
Add n
T4
DO
an
T4n
T4
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DO
D and DM ODT on
an
Q ODT off
NOP
Q ODT off
T5
T4n
EXT
, 1.8V V
T5n
T5
NOP
Q ODT on
NOP
T6
DI
bn
TRANSITIONING DATA
DD
T6n
, HSTL, SIO, RLDRAM II
T6
NOP
©2003Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
DO
bn
Q ODT on
NOP
T7
Q ODT off
T6n
T7n
T7
NOP
Operations
NOP
NOP
T8
DON’T CARE
Q ODT on
DO
an
DON’T CARE
Q ODT off
T8n
NOP

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