MJE18004D2G ON Semiconductor, MJE18004D2G Datasheet - Page 9

• Manufacturer Part Number: MJE18004D2G
• Description: TRANS PWR NPN 5A 450V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MJE18004D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
1.0
0.8
0.6
0.4
0.2
10
1
0
20
10
0.01
Figure 28. Forward Bias Safe Operating Area
0.1
Figure 30. Forward Bias Power Derating
1
0.01
40
V
0.05
0.02
0.5
0.2
0.1
SINGLE PULSE
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
60
DC
C
, CASE TEMPERATURE (°C)
5 ms
80
DERATING
THERMAL
100
Figure 31. Typical Thermal Response (Z
0.1
100
1 ms
120
TYPICAL THERMAL RESPONSE
TYPICAL CHARACTERISTICS
10 ms
BREAKDOWN
DERATING
SECOND
1 ms
140
EXTENDED
http://onsemi.com
SOA
1
160
1000
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate I
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate. The data of Figure 28 is based on T
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when
T
as thermal limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse biased. The safe level is
specified as a reverse−biased safe operating area (Figure 29). This
rating is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
9
t, TIME (ms)
C
There are two limitations on the power handling ability of a
T
> 25°C. Second breakdown limitations do not derate the same
J
(pk) may be calculated from the data in Figure 31. At any
P
(pk)
DUTY CYCLE, D = t
6
5
4
3
2
1
0
200
t
1
Figure 29. Reverse Bias Safe Operating Area
t
2
qJC(t)
10
V
CE
) for MJE18004D2
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
1
/t
2
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
qJC
(t) = r(t) R
0 V
= 2.5°C/W MAX
- T
C
C
600
−V
= P
100
qJC
(pk)
CE
-1.5
1
V
R
limits of the transistor
qJC
C
- 5 V
(t)
= 25°C; T
800
T
GAIN ≥ 5
L
C
C
= 2 mH
≤ 125°C
J
(pk) is
1000
1000